DATASHEET
SIR67-21C/TR8
? Precautions For Use
1. Over-current-proof
Customer must apply resistors for protection , otherwise slight voltage shift will cause big
current change ( Burn out will happen ).
2. Storage
2.1 Do not open moisture proof bag before the products are ready to use.
2.2 Before opening the package, the LEDs should be kept at 30 ℃ or less and 90%RH or less.
2.3 The LEDs should be used within a year.
2.4 After opening the package, the LEDs should be kept at 30 ℃ or less and 70%RH or less.
2.5 The LEDs should be used within 168 hours (7 days) after opening the package
2.6 If the moisture absorbent material (silica gel) has faded away or the LEDs have exceeded the storage
time, baking treatment should be performed using the following conditions.
Baking treatment : 60 ± 5 ℃ for 24 hours.
3. Soldering Condition
3.1 Pb-free solder temperature profile
3.2 Reflow soldering should not be done more than two times.
3.3 When soldering, do not put stress on the LEDs during heating.
3.4 After soldering, do not warp the circuit board.
Revision Copyright ?
Release Date:2013-06-03 15:22:49.0
6 :1
LifecyclePhase:
2010, Everlight All Rights Reserved. Release Date : MAY.20.2013. Issue No: DIR-0000957 www.everlight.com
Expired Period: Forever
相关PDF资料
SIR698DP-T1-GE3 MOSFET N-CHAN 100V(D-S)POWERPAK
SIR800DP-T1-GE3 MOSFET N-CH 20V 8-SOIC
SIR802DP-T1-GE3 MOSFET N-CH D-S 20V 8-SOIC
SIR826DP-T1-GE3 MOSFET N-CH 80V 60A POWERPAK
SIR844DP-T1-GE3 MOSFET N-CH D-S 25V 8-SOIC
SIR846ADP-T1-GE3 MOSFET N-CH 100V 60A SO8
SIR850DP-T1-GE3 MOSFET N-CH 25V 30A PPAK 8SOIC
SIR862DP-T1-GE3 MOSFET N-CH 25V 8-SOIC
相关代理商/技术参数
SIR67-21C-TR8 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:Top Infrared LED
SIR688DP-T1-GE3 制造商:Vishay Semiconductors 功能描述:N-CH POWERPAK SO-8 BWL SPLIT GATE 60V 3.5MOHM@10V - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 60V 60A 8-SO 制造商:Vishay Intertechnologies 功能描述:N-Ch PowerPAK SO-8 BWL split gate 60V 3.5mohm@10V
SIR698DP-T1-GE3 功能描述:MOSFET 100V 7.5A 23W 195mOhm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR770DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SIR770DP-T1-GE3 功能描述:MOSFET 30V 8A/8A DUAL N-CH MOSFET w/Shottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR774DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiR774DP-T1-GE3 功能描述:MOSFET 30 Volts 40 Amps 62.5 Watts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR788DP-T1-GE3 功能描述:MOSFET 30V 60A 48W 3.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube